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Characteristics of B doped ZnO thin films deposited on n and p-type ‎porous silicon for NH3 and CO gas sensing


Rashid Hashim Jabbar , Israa Hadi Hilal , Warqaa Adnan Shakir , ‎ Mudar Ahmed Abdulsattar

Abstract

ZnO and ZnO:B thin films properties were studied. These films were deposited at 450 °C on n-type and p-type porous silicon (PS) substrates using spray pyrolysis deposition (SPD) technique with a thickness of (250±10 nm) as a gas sensor for NH3 and CO gases. Boron increasing led to increasing the roughness and decreasing the grain size. The structural details were obtained by using (XRD), (SEM) and (TEM). The sensitivity of the films for NH3 and CO gas increased by increasing boron doping.



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