Characteristics of B doped ZnO thin films deposited on n and p-type porous silicon for NH3 and CO gas sensing
ZnO and ZnO:B thin films properties were studied. These films were deposited at 450 °C on n-type and p-type porous silicon (PS) substrates using spray pyrolysis deposition (SPD) technique with a thickness of (250±10 nm) as a gas sensor for NH3 and CO gases. Boron increasing led to increasing the roughness and decreasing the grain size. The structural details were obtained by using (XRD), (SEM) and (TEM). The sensitivity of the films for NH3 and CO gas increased by increasing boron doping.
Contact SPER Publications
SPER Publications and Solutions Pvt. Ltd.
HD - 236,
Near The Shri Ram Millenium School,
Noida-Greater Noida Expressway,
Noida-201301 [Delhi-NCR] India